SimuLase^TM is the first software tool that allows a broad audience to take full advantage of the latest in semiconductor modeling. It's underlying fully microscopic many-body models allow to determine the electro-optical properties like, gain/absorption, refractive indicies, spontaneous emission (photo luminescence) or radiative carrier losses and (coming Aug. 08) Auger losses, with unprecedented accuracy while removing fit-parameters that used to require time and cost-intensive experimental investigations, like lineshape broadenings or loss coefficients and their spectral, thermal or density dependencies.

SimuLase^TM provides:

• the correct fundamental input that is the required starting point for any reliable device modeling,
• an easy to use GUI-interface that allows to determine many basic characteristics of structures without any experimental feedback,
• experimentally veryfied models that have lead to more than fifty publications in peer-reviewed journals over the last two decades.

And, you don't have to be an expert in microscopic manybody physics to take full advantage of this tool. SimuLase^TM can preset all parameters besides the structural design automatically - taking full advantage of the fit-parameter free nature of the microscopic models. For quick shots or research interests, SimuLase allows to influence the calculation parameters or use simplified models.

SimuLase^TM allows to:

• set up GainDatabases yourself without having to disclose any information and,
• analyze the data with the integrated SimuLase_Analyzer^TM,
• design, analyze and optimize devices with unprecedented accuracy and ease.

You can download a free demo-version of SimuLase^TM as well as its manual or a quick start guide here .

For optimized operation, we configure SimuLase^TM according to your individual specifications, like, generally the material systems of interest.

For any questions regarding SimuLase^TM please contact us at simulase@nlcstr.com.




Screen-grabs of SimuLase^TM. Click for enlarged image.